• Semiconductors & Devices

FOR IMMEDIATE RELEASE No. 3323

TOKYO, December 12, 2019, 2019 - (TOKYO: 6503) announced today that its lineup of gallium-nitride high-electron-mobility transistors (GaN-HEMTs) for satellite-communication (SATCOM) earth stations will be expanded with the addition of new Ku-band (12-18GHz) 70W and 100W GaN-HEMTs suitable for multi-carrier applications. The 70W-model GaN-HEMT achieves low third-order intermodulation distortion (IMD3)* with a wide offset frequency** of up to 400MHz, which is believed to be the industry's highest level, while the 100W-model GaN HEMT combines unmatched power output with low IMD3 and an offset frequency of up to 200MHz. 捷报足球即时比分 will begin shipping samples of both models on January 15.

  1. *Measure of an amplifier's distortion performance in the case of two-tone signals
  2. **Frequency difference between two-tone signals, used in IMD3 measurements
GaN HEMTs for Ku-band SATCOM earth stations

GaN HEMTs for Ku-band SATCOM earth stations
Left: MGFK50G3745A (100W) Right: MGFK48G3745A (70W)

The demands for Ku-band satellite communications and satellite news-gathering (SNG) are rapidly growing to support communications during natural disasters and in rural areas where the installation of cable network equipment is difficult. In addition, increasingly large-capacity, high-speed communications have expanded needs for both multi-carrier and single-carrier satellite communications. 捷报足球即时比分's new GaN HEMTs are expected to accelerate the realization of smaller earth stations as well as faster and larger-capacity communications for various needs.

Sales Schedule

Product Application Model Overview Shipment
Frequency Saturated
output
power		 Offset
frequency
Ku-band
GaN-
HEMTs		 SATCOM
earth stations		 MGFK48G3745A 13.75-14.5GHz 48.3dBm
(70W)		 Up to 400MHz Jan. 15, 2020
MGFK50G3745A 50.0dBm
(100W)		 Up to 200MHz

Product Features

  1. 1)Industry-leading wide offset frequency up to 400MHz for large-capacity satellite communication
    • The MGFK48G3745A model uses a new matching circuit to deliver an industry-leading wide offset frequency, which is 80 times higher than that of current models, and low IMD3 with a wide offset frequency of up to 400MHz, for large-capacity, high-speed satellite communications, including for multiple carriers.
  2. 2)Unrivaled output power up to 100W will contribute to downsizing of SATCOM earth stations
    • The MGFK50G3745A model uses optimized transistor matching circuits to deliver 100W peak output power and low IMD3 to help downsize SATCOM earth stations by reducing on-board components.

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